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Metal oxide field effect transistor

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Part number Type Package VDS (V) VGS ±(V) ID Max. (A) RDS(ON) @ 10V Max. (mΩ) RDS(ON) @ 10V Typ. (mΩ) RDS(ON) @ 4.5V Max. (mΩ) RDS(ON) @ 4.5V Typ. (mΩ) Qg (nC) @ 10V Qg (nC) @ 4.5V Qgd (nC) Qgs (nC) TJ Max. (°C) Ciss (pF) Coss (pF) Crss (pF) VGS(th) Max. (V) VGS(th) Min. (V) PDF
GTS4884 N-Channel SOIC-8 30 ±20 8.5 23 31 33 16 9 5.4 5.4 1950 280 190 2.7 1.55
GTD2309 N-Channel SOT23 -60 ±20 -2 224 213 300 256 5.4 1.6 1.1 1.1 310 22 15 -2.5 -1
GTD30P06T P-Channel TO252 -60 ±20 40 31 55 42 48 10 11 11 3060 300 205 -2.5 -1
GTD3401 P-Channel SOT-23 -30 ±12 -4.2 50 42 65 53 9.4 3 2 2 954 115 77 -1.3 -0.7
GTD3419C P-Channel DFN3*3 -30 ±25 20 32 12.5 5 5.4 5.4 1345 194 158 -2.5 -1
GTD50N03FN N-Channel DFN3*3 30 ±20 8.5 7 13 10 12.8 6.5 3.3 3.3 1317 163 131 2.5 1.0
2N7002 N-Channel SOT-23 60 ±20 0.115 5.6 4.7 6.9 3.5 50 25 5 3 1
GTS4882 N-Channel SOP8 40 ±20 20 16 26 20 9.8 3.9 2.8 2.8 1013 107 76 2.5 1.2
GTD7002K N-Channel SOT-23 60 ±20 0.3 2 1 3 1.7 50 25 5 1.9 0.7
GTD2300 N-Channel SOT-23 20 ±8 2.3 100 50 5.5 3.3 1.3 0.7 0.7 405 75 55 1.1 0.5
GTD2301 P-Channel SOT-23 -20 ±8 -2.3 230 150 5.5 3.3 1.3 0.7 0.7 405 75 55 -1 -0.4
GTS4803 P-Channel SOP8 -30 ±20 45 35 82 48 6.4 2.3 2.2 2.2 632 100 74 -2.5 -1
GTD2102 N-Channel SOT-323 20 ±8 2.1 0.068 0.059 10 4 1.5 0.65 0.65 300 120 80 1.2 0.65
GTG4N02S P-Channel SOT-23-6L -20 12 48 38 0.5 0.4 0.4 240 45 23 1.2 0.5
BSS138WS N-Channel SOT-23 50 ±20 0.22 3.5 0.88 6 1.5 27 13 6 1.5 0.8