Global - Chinese English
Metal oxide field effect transistor

Home > Metal oxide field effect transistor

Part number Type Package VDS (V) VGS ±(V) ID Max. (A) RDS(ON) @ 10V Max. (mΩ) RDS(ON) @ 10V Typ. (mΩ) RDS(ON) @ 4.5V Max. (mΩ) RDS(ON) @ 4.5V Typ. (mΩ) Qg (nC) @ 10V Qg (nC) @ 4.5V Qgd (nC) Qgs (nC) TJ Max. (°C) Ciss (pF) Coss (pF) Crss (pF) VGS(th) Max. (V) VGS(th) Min. (V) PDF
GTD2102 N-Channel SOT-323 20 ±8 2.1 0.068 0.059 10 4 1.5 0.65 0.65 300 120 80 1.2 0.65
GTG4N02S P-Channel SOT-23-6L -20 12 48 38 0.5 0.4 0.4 240 45 23 1.2 0.5
BSS138WS N-Channel SOT-23 50 ±20 0.22 3.5 0.88 6 1.5 27 13 6 1.5 0.8
GTD3404 N-Channel SOT23-3L 30 ±20 5.8 35 20 47 27 11 2.8 1.3 1.3 373 67 41 2.5 1
2SK3019 N-Channel SOT-523 30 ±20 0.1 13 9 4 1.5 0.8
GTD100N03 N-Channel TO-252 30 ±20 100 5.5 4.0 70 16.3 8.8 8.8 3400 356 308 3 1
GTS4806E N-Channel SOIC-8 20 ±12 14 11 17 14.3 17.9 4.7 1.5 1.5 1810 232 200 1 0.5
GTG4606 N-Channel SOP-8 30 ±20 25 20 33 25 7.2 2.2 1.4 1.4 550 68 55 2.5 1.0
GTD100N03DF N-Channel DFN3X3-8 30 ±20 4 3.4 6 5.2 31.6 11.7 8.6 8.6 3070 400 315 2.5 1.0
GTD200N04DF N-Channel PDFN8L(5x6) 40 ±20 1.8 1.4 122.2 42 23.5 23.5 5744 787 615 4 2
GTG4012 N+P Channel TO252 40 ±20 25 19 35 24 5.5 2.5 1.25 1.25 593 76 56 2.5 1.0
GTD3401X P-Channel SOT-23-3 -20 ±10 -3 3 0.8 0.7 0.7 290 55 29 -1 -0.4
GTD3400X N-Channel SOT-23-3 20 ±12 3 2.9 0.6 0.4 0.4 260 48 24 1.2 0.5
GTD2318 N-Channel SOT-23 40 ±20 5.6 42 35 51 41 5.8 1 1.1 1.1 340 60 30 2.5 1.2
GTD2333E N-Channel SOT-23 -12 ±8 0.035 0.0285 15 3.8 1.9 1.9 1225 315 260 -1 -0.4